Abstract:
Zinc Oxide (ZnO) is a group II-VI semiconductor thin film with a hexagonal wurtzite crystal
structure. Its direct wide band gap of Eg= 3.2~3.7eV, low electrical resistivity, high optical
transmittance characteristics within the visible range and high resistance to degradation under
normal operating conditions. These characteristics distinct itself from other semiconductors with
similar crystal structure to widely use in optoelectronic industries. ZnO doped with impurity is a
potential choice for transparent conducting oxide (TCO) in commercial area as a transparent
electrode in flat panel displays (FPDs) and solar cells. As it is regarded a good transparent
conductive oxide (TCO) due to its opto-electro properties, non-toxicity, relatively abundance and
low cost; Attention of this is to analyze materials thickness, surface morphology, electrical
characteristics, crystal structure and orientation. In execution to this purpose, the sol-gel process
of producing Zinc Oxide (ZnO) has chosen which is doped by impurities of Aluminum (Al) to
make Al doped Zinc Oxide (Zno:Al) on a glass substrate, using 2-methoxyethanol as solvents
and monoethanolamine (MEA) as stabilizer. This combination further increases its optical
transmittance and band gap of the thin film material. The sole purpose was to optimize the
characteristics of this material by focusing on its several characteristics followed by changing the
duration of solution preparation, changing the deposition level on substrates, variation in
annealing atmosphere and temperature to observe the characteristics changes occurred in the
film. In each stage of observation significant characteristics of the film have found which the
main execution of this thesis.
