Abstract:
The object of present work has been to study junction
properties of some commercially available diodes and transistors.
We studied over fifty samples out of which twenty were analyzed in
details and are reported here. To study the property of depletion
layer of p-n junction we carried out a detail C-V measurement.
From this study junction capacitance, depletion width, contact
potential etc. have been evaluated. From I-V studies (for forward
bias and reverse bias conditions) efficiency factor r? has been
estimated for large numbers of diodes. These studies indicate the
presence of deep impurity centers in most of the samples.
To confirm this we carried out detail investigation to
detect defect states, if any, and characterized the defect states
whenever found. We have observed the presence many and varied deep
states both in Si and Ge. The methods used
the states are TSCAP and TSC.
for characterizing
Ip carrying out the investigation we have to construct fixed
and variable temperature system, a constant temperature bath and
many electronic circuitry needed for our experiments
